NTBSD4P32SP-08 is a 1G x 64-bit (1R8) or 512M x 64-bit (2R8) SDRAM (Synchronous DRAM), memory module based on eight 1G x 8-bit or sixteen 512M x 8 FBGA components per module. The SPD is programmed to latency timing of 16-20-20 at 1.35V. support XMP, Each 288-pin DIMM uses gold contact fingers. The electrical and mechanical specifications are as follows: FEATURES
• Power Supply: VDD=1.35V Typical
• VDDQ = 1.2V Typical
• VPP – 2.5V Typical
• VDDSPD=2.2V to 3.6V
• Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
• Low-power auto self refresh (LPASR)
• Data bus inversion (DBI) for data bus
• On-die VREFDQ generation and calibration
• Single-rank
• On-board I2 serial presence-detect (SPD) EEPROM
• 16 internal banks; 4 groups of 4 banks each
• Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS)
• Selectable BC4 or BL8 on-the-fly (OTF)
• Fly-by topology
• Terminated control command and address bus
• PCB: Height 1.23” (31.25mm)
• RoHS Compliant and Halogen-Free
Specification:
CL(IDD): 16 cycles
Row Cycle Time (tRCmin): 45ns(min.)
Refresh to Active/Refresh Command Time (tRFCmin): 350ns(min.)
Row Active Time (tRASmin): 26.25ns(min.)
Maximum Operating Power: TBD W*
UL Rating: 94V-0
Operating Temperature: 0?C to +70?C
Storage Temperature: -40?C to +85?C
*Power will vary depending on the SDRAM used.
